Transducteurs Presyon Endistriyèl Objektif Jeneral

The HNP20-B medium pressure sensor integrates high-precision MEMS chips with martensitic precipitation hardened stainless steel measuring diaphragms, with diaphragms and process interfaces precision-machined in one piece for structural integrity. It operates on piezoresistive sensing: pressure-induced micro-deformation of the diaphragm is captured by the MEMS chip and converted into primary electrical signals, which undergo full-temperature intelligent compensation over -40~125℃, maintaining ±0.25%/±0.5%FS accuracy and consistent low temperature drift. Its triple overload integrated structure is a core design highlight, enabling it to withstand 3× full-scale overload pressure and over 5× burst pressure, with >10 milyon andirans siklik plen-presyon, sa ki fè li ideyal pou mezire dlo, lwil oliv, gaz ak lòt medya. Tout -metal sele estrikti a anpeche flit medya yo ak pwolonje lavi sèvis, pandan y ap sikwi a intrinsèqueman an sekirite satisfè sètifikasyon EMC, bay gaya iminite elektwomayetik ki gen ladan 4kV kontak / 8kV lè rezistans ESD. Powered by 24VDC, li konvèti siyal trete nan 4-20mA, 0-10V oswa RS485, ak kominikasyon HART si ou vle. Li ofri koneksyon fleksib (Hirschmann / ploge avyasyon), pwoteksyon IP65, ak reziste 200g chòk ak ± 20g Vibration. Avèk yon tan repons mwens pase oswa egal a 10ms pou pwodiksyon aktyèl ak pwosesis customizable / koneksyon elektrik, li se pwepare pou gwo demann senaryo endistriyèl tankou bòdi piki, idwolik, konstriksyon bato ak sistèm ponp.